Name: TSM60NC196CI-C0G
Brand: Taiwan Semiconductor Corporation
SKU: TSM60NC196CI C0G
Availability: InStock
Rating: 5 (84 reviews)

TSM60NC196CI-C0G

Per Riferimento Soltanto

Numero di parte	TSM60NC196CI-C0G
Produttore	Taiwan Semiconductor Corporation
Descrizione	600V, 20A, SINGLE N-CHANNEL POWE
Scheda dati
pacchetto	-
ECAD
A magazzino	11.520 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 29 - gen 3 (Scegli una spedizione rapida)
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Specifiche TSM60NC196CI-C0G

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	20A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1535 pF @ 300 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	70W (Tc)
Rds On (Max) @ Id, Vgs	196mOhm @ 9.5A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	ITO-220
Pacchetto / caso	TO-220-3 Full Pack, Isolated Tab

TSM60NC196CI-C0G Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TSM60NC196CI-C0G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TSM60NC196CI-C0G

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